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The CSD17507Q5A is a 30 V N-channel NexFET™ Power MOSFET in an 8-VSONP (5x6) package. It features a maximum on-resistance of 9 mΩ at VGS=10V and 11.8 mΩ at VGS=4.5V. Continuous drain current reaches 65 A at TA=25°C and 61 A at TC=25°C, with a pulsed current capability of 163 A. Gate charge is typically 2.8 nC at VGS=4.5V. The device operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix Q5A against official Texas Instruments documentation to confirm the exact tape and reel configuration. Ensure the ordering part number matches the required packaging format before finalizing procurement orders.
Select this component when designing power stages requiring low conduction losses and rapid switching transitions. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values for your specific PCB layout constraints.
This device belongs to the NexFET™ family from Texas Instruments, engineered for high-efficiency power conversion. It utilizes advanced silicon technology to minimize both static and dynamic losses in compact surface-mount packages suitable for dense board layouts.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions to preserve circuit performance and mechanical fit.