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The CSD17507Q5AT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and operates in an enhancement mode. The device utilizes silicon technology and is housed in an 8-VSONP (5x6mm) surface-mount package. Key electrical characteristics include a continuous drain current of 65A at 25°C ambient temperature, with a maximum on-resistance of 9mΩ at 10V gate drive. The component supports a gate-source voltage range of ±20V and has a typical gate charge of 2.8nC at 4.5V. It is designed for high-efficiency power conversion applications.
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm the manufacturer part number matches exactly to ensure compatibility with NexFET A series specifications. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement orders.
Select this component for designs prioritizing low switching loss due to its minimal gate charge profile. Ensure the PCB layout accommodates the 5mm x 6mm VSONP footprint. Verify that the operating junction temperature remains within the specified limits given the thermal resistance values provided in the official documentation.
This device belongs to the CSD17507Q5A series from Texas Instruments. It is part of the NexFET family, which focuses on high-performance power management solutions. The component is specifically engineered to optimize efficiency in DC-DC conversion circuits used in modern electronic systems.
Consult official Texas Instruments substitution guides for verified equivalents. Cross-reference pinouts and thermal performance metrics if considering alternative manufacturers.