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Product Detailed Parameters
- Description：MOSFET N-CH 30V 65A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：506 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17527Q5A is a 30-V, N-channel NexFET power MOSFET manufactured by Texas Instruments. It features an 8-pin VSONP package with dimensions of 5 mm x 6 mm. The device exhibits a typical on-resistance (RDS(on)) of 10.8 mOhm at a gate-source voltage of 10 V. It supports a continuous drain current of 65 A at case temperature and 13 A at ambient temperature. The component is designed for surface-mount installation and operates within standard industrial temperature ranges.
Feature Summary
- NexFET technology optimized for low on-resistance
- Single N-Channel configuration
- Surface-mount VSONP package design
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required tape-and-reel quantities and packaging standards. Confirm that the procurement channel provides original manufacturer documentation to validate authenticity. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure storage conditions align with moisture sensitivity level requirements before soldering.
Selection Notes
Select this component when a 30-V breakdown voltage and low RDS(on) are required for high-efficiency power conversion. The 8-pin VSONP package suits space-constrained designs needing robust thermal performance. Evaluate the 65 A pulsed current capability against peak load demands. Consider the gate charge characteristics for switching frequency optimization in synchronous rectifier topologies.
Part Context
This part belongs to Texas Instruments' NexFET family of power MOSFETs, which emphasizes efficiency and compact form factors. The CSD17527Q5A specifically targets applications requiring low conduction losses in 30-V systems. It complements other devices in the series offering similar voltage ratings but different current or package configurations.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications. Verify pinout compatibility before replacing to avoid circuit damage. Ensure thermal resistance parameters meet the existing heatsinking requirements.
