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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A/60A 8SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2050 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD17552Q3A is a NexFET N-channel enhancement mode MOSFET manufactured by Texas Instruments. It features a VSONP-8 surface-mount package with an exposed drain for thermal management. Key electrical parameters include a 30V drain-source breakdown voltage and an 8.1mΩ maximum on-resistance at 10V gate drive. The device supports a continuous drain current of 48A and operates within a junction temperature range of -55°C to +150°C. Additional specifications include a 9nC typical gate charge, ±20V gate-source voltage rating, and 2.6W power dissipation capability.
Feature Summary
- NexFET technology provides low on-resistance and fast switching performance.
- Exposed drain pad design facilitates efficient heat dissipation in compact layouts.
- Enhanced avalanche ruggedness allows reliable operation under transient energy stress.
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Low-side switching applications
Procurement Notes
Verify the specific suffix 'Q3A' against official Texas Instruments documentation to confirm the exact tape-and-reel packaging configuration. Ensure that the ordering part number matches the required quantity per reel as defined in the manufacturer's datasheet. Cross-reference the RoHS compliance status directly with the component marking or official specification sheet prior to procurement.
Selection Notes
Select this component when a 30V N-channel MOSFET with low Rds(on) is required for high-efficiency power conversion. The VSONP-8 package is suitable for space-constrained designs requiring robust thermal performance. Consider the 48A continuous current rating and avalanche energy capabilities for applications involving inductive loads or potential voltage spikes.
Part Context
This component belongs to the Texas Instruments NexFET family of power MOSFETs. The series focuses on optimizing the figure of merit between on-resistance and gate charge for improved efficiency. The CSD17552Q3A utilizes silicon technology and is designed for general-purpose power switching applications requiring high reliability and compact form factors.
Replacement Considerations
Consult the official Texas Instruments selection guide for verified direct replacements within the CSD17552 series. Ensure any substitute maintains identical pinout, package dimensions, and electrical ratings such as Vds, Id, and Rds(on). Verify compatibility with existing thermal management solutions before implementation.
