ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 17A/60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2050 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17552Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an enhancement mode configuration within an 8-pin VSONP package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 60 A, and a maximum on-resistance (Rds On) of 7.5 mΩ. The device operates with a gate-source voltage range of -20 V to +20 V and has a typical gate charge (Qg) of 9 nC. Thermal specifications indicate a power dissipation of 3 W, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- NexFET technology designed for high efficiency and low switching losses
- Low on-resistance optimized for conduction loss reduction
- Enhanced thermal performance via exposed pad design
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification stages
Procurement Notes
Verify the specific suffix 'Q5A' against official Texas Instruments documentation to confirm exact binning and testing criteria. Ensure the ordering part number matches the required tape-and-reel or cut-tape format. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a 30 V rating and approximately 7.5 mΩ on-resistance are required in a compact surface-mount footprint. Consider the 60 A continuous current capability and low gate charge for driving requirements. Evaluate thermal constraints based on the 3 W power dissipation rating and ensure the application fits within the specified temperature limits.
Part Context
This device belongs to the CSD17552 series of NexFET power MOSFETs. It represents a silicon-based solution intended for general-purpose power switching applications. The product line focuses on balancing low on-resistance with fast switching speeds to improve overall system efficiency in compact power designs.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
