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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：1.65V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7020 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 191W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17556Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30 V drain-source breakdown voltage and operates with a gate-source voltage range of ±20 V. The device supports a continuous drain current of 34 A at ambient temperature and 100 A at case temperature. Its maximum on-resistance is 1.4 mΩ at 10 V gate drive and 40 A. Key electrical parameters include a gate charge of 39 nC, an input capacitance of 7020 pF, and a threshold voltage of 1.65 V. The component is rated for a junction temperature up to 150°C and is housed in an 8-VSON-CLIP package.
Feature Summary
- Utilizes NexFET technology for enhanced power efficiency
- Provides low on-resistance for reduced conduction losses
- Features a compact surface-mount package design
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific suffix 'BT' against the official Texas Instruments datasheet to confirm tape-and-reel packaging specifications. Ensure the order matches the exact part number CSD17556Q5BT to avoid discrepancies in delivery format or handling requirements. Cross-reference the manufacturer's latest documentation for any updates regarding qualification status or assembly site changes before finalizing procurement.
Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capability is required. The 1.4 mΩ on-resistance makes it suitable for low-loss power paths. Consider the 8-VSON-CLIP package for space-constrained designs. Verify that the thermal performance meets the system's dissipation needs, as the device supports significant current under case cooling conditions.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. These devices are engineered for high-efficiency power conversion. The CSD17556Q5BT variant specifically targets applications requiring robust performance in a small footprint. It complements other components in power supply designs where low resistance and fast switching are critical.
Replacement Considerations
Compatible substitutes within the same series include CSD17556Q5B and CSD17556Q5BT.B. These variants share identical electrical characteristics and pin configurations. Verify package compatibility and ensure the substitute maintains the same voltage and current ratings for direct replacement.
