CSD17559Q5

$2.80

Description：MOSFET N-CH 30V 40A/100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:251b374b2970 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 40A/100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9200 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 96W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (5x6)
Package / Case：8-PowerTDFN

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CSD17559Q5

Overview

The CSD17559Q5 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an 8-pin VSON-CLIP package designed for surface mount applications. The device provides a drain-source breakdown voltage of 30V and supports a continuous drain current of 100A. Its maximum on-resistance is specified at 950 micro-ohms, with a gate-source threshold voltage of 1.4V. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

NexFET technology platform for optimized power performance
Single channel enhancement mode configuration
Exposed pad thermal design for efficient heat dissipation

Applications

DC-DC converter circuits
Power management systems
Load switching applications

Procurement Notes

Verify the specific part number suffix against official manufacturer documentation to confirm exact electrical characteristics and packaging details. Ensure compliance with RoHS standards and check REACH SVHC declarations prior to integration into final designs.

Selection Notes

Select this component based on its 30V rating and low on-resistance requirements for high-current applications. Consider the VSON-CLIP package for thermal management needs and verify that the 100A current capability aligns with system load demands.

Part Context

This device belongs to the CSD17559Q5 series of NexFET Power MOSFETs. It is part of Texas Instruments' portfolio of silicon-based discrete transistors designed for efficient power control in compact form factors suitable for modern electronic equipment.