CSD17559Q5T

$3.17

Description：MOSFET N-CH 30V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:da06e203a3b1 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9200 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 96W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (5x6)
Package / Case：8-PowerTDFN

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CSD17559Q5T

Overview

The CSD17559Q5T is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a VSON-CLIP-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 100 A. Its on-resistance (Rds On) is specified at 1.15 mOhms. The gate-source voltage range spans from -20 V to +20 V, with a threshold voltage (Vgs th) of 1.2 V. Total gate charge (Qg) is 51 nC. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 96 W. Switching characteristics include a fall time of 14 ns and a rise time of 41 ns.

Feature Summary

NexFET technology platform for enhanced power efficiency
Low on-resistance design for reduced conduction losses
Robust thermal performance supporting high junction temperatures

Applications

Synchronous buck converters
DC-DC converter circuits
Power management systems

Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the VSON-CLIP-8 footprint matches the intended PCB layout requirements. Ensure compliance with RoHS and REACH standards as documented in the product specifications. Cross-reference the part number with authorized distributors to validate authenticity and traceability.

Selection Notes

Select this component for applications requiring high current handling capability within a compact surface-mount form factor. The 30 V rating suits low-voltage DC-DC conversion tasks. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment. Consider the switching speeds and gate charge parameters when designing drive circuits for optimal efficiency.

Part Context

This part belongs to the CSD17559Q5 series of NexFET Power MOSFETs from Texas Instruments. These devices are engineered for high-efficiency power switching applications. The series emphasizes low on-resistance and fast switching capabilities. They are designed to meet the demands of modern power management solutions in industrial and consumer electronics.