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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.69mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：121 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17570Q5B is a 30V N-channel NexFET power MOSFET designed for high-efficiency power conversion. It features an ultra-low on-resistance of 0.56mΩ typical at VGS=10V and 0.74mΩ typical at VGS=4.5V. The device utilizes an 8-VSONP (5x6mm) package to support surface-mount assembly. Rated for continuous drain current up to 100A, it offers low thermal resistance and avalanche ruggedness. These specifications make it suitable for ORing, hot-swap, and server power supply applications requiring minimal conduction loss in high-current paths.
Feature Summary
- Ultra-low on-resistance minimizes conduction losses in high-current output stages
- Integrated body diode supports synchronous rectification and ORing configurations
- Rugged avalanche rating ensures reliability under transient stress conditions
- Compact 5x6mm SON package facilitates high-density PCB layout
Applications
- Server power supply 12V output control links
- ORing controller circuits for redundant power systems
- Hot-swap controllers for high-current load switching
- Low-voltage DC-DC converter output stages
Procurement Notes
Verify the specific suffix 'Q5B' to confirm the 30V voltage rating and 8-VSONP package type. Ensure compatibility with the target application's gate drive voltage requirements, as RDS(on) varies significantly between 4.5V and 10V drives. Confirm RoHS compliance and lead-free status if required by the manufacturing process. Check for moisture sensitivity level handling instructions during assembly.
Selection Notes
Select this component when minimizing conduction loss is critical for thermal management in high-current applications. The 30V rating provides sufficient headroom for 12V systems while maintaining low resistance. Consider the 5x6mm package size for space-constrained designs. Evaluate the trade-off between gate charge and switching speed against the benefits of lower static losses in continuous conduction mode operations.
Part Context
This device belongs to Texas Instruments' NexFET family, which focuses on reducing power loss through advanced silicon technology. The CSD17570Q5B represents a specific optimization for low-voltage, high-current scenarios where efficiency directly impacts system cooling requirements and overall power density in enterprise infrastructure equipment.
Replacement Considerations
The CSD16570Q5B is a verified substitute offering similar performance with a 25V rating instead of 30V. Both devices share the same 8-VSONP package and NexFET architecture, allowing for potential pin-compatible upgrades or downgrades depending on voltage margin requirements.
