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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.69mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：121 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17570Q5BT is a single N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency power switching applications. It features a low on-resistance of 0.92 mΩ at VGS = 10V and supports a continuous drain current of 100A. The device operates with a drain-source voltage rating of 30V and is housed in an 8-pin VSON-CLIP (DNK) package measuring 5mm x 6mm. Key electrical parameters include a gate charge of 32 nC at 4.5V and a maximum power dissipation of 125W at case temperature. It functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for reduced conduction losses
- High current handling capability
- Compact surface-mount packaging
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch circuits
Procurement Notes
Verify the specific suffix 'BT' indicates tape and reel packaging when ordering. Confirm the manufacturer part number matches exactly to ensure compatibility with design specifications. Check for RoHS compliance status as indicated in official documentation before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring low RDS(on) in a small footprint. Ensure the driving circuit can handle the specified gate charge and voltage levels. Verify thermal management capabilities align with the stated power dissipation limits under expected operating conditions.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. It utilizes silicon technology and is intended for general-purpose power switching. The VSON-CLIP package provides enhanced thermal performance compared to standard SON packages.
Replacement Considerations
Check for direct substitutes within the same NexFET series or comparable 30V N-channel devices with similar RDS(on) and current ratings. Ensure pinout compatibility and package dimensions match the existing PCB layout.
