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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17573Q5B is a 30 V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum continuous drain current of 14 A at 25°C and a low on-resistance of 9.4 mΩ at Vgs = 10 V. The device operates with a gate-source threshold voltage of 1.8 V at Id = 250 µA. It supports avalanche-rated energy handling up to 24 mJ. The component is housed in an 8-VSONP (5x6) package, providing a thermal resistance suitable for surface-mount applications.
Feature Summary
- NexFET technology enables high-speed switching with low gate charge characteristics.
- Avalanche-rated construction provides robustness against transient energy events.
- Integrated body diode facilitates synchronous rectification and freewheeling operations.
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Synchronous rectification stages
Procurement Notes
Verify the specific suffix 'Q5B' to confirm the 8-VSONP (5x6) package variant. Ensure compatibility with the required thermal dissipation capabilities for the target application environment. Confirm RoHS compliance status as indicated in the official datasheet specifications before finalizing procurement orders.
Selection Notes
Select this component for designs requiring a 30 V rating with moderate current handling up to 14 A. The low on-resistance minimizes conduction losses in power paths. Consider the 8-VSONP package size for space-constrained PCB layouts where efficient heat transfer is necessary for reliable operation under load.
Part Context
This part belongs to the CSD1757x series of N-Channel NexFET Power MOSFETs from Texas Instruments. These devices are engineered for efficiency in power conversion systems. The series utilizes advanced silicon technology to achieve superior performance metrics compared to standard MOSFETs, targeting modern electronic equipment requirements.
Replacement Considerations
Cross-reference with other CSD1757x variants such as CSD17578Q3A or CSD17576Q5B if different current ratings or package footprints are acceptable. Verify pinout compatibility and electrical parameter overlaps before substituting.
