ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17573Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30V drain-source voltage rating and supports continuous drain currents up to 100A at ambient temperature. The device utilizes an 8-VSONP (5x6) surface-mount package with a clip structure for enhanced thermal performance. Key electrical parameters include a maximum on-resistance of 2.4 milliohms at 10V gate drive, a threshold voltage of 1.8V, and a total gate charge of 68nC. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology provides low on-resistance and fast switching characteristics
- Clip-based VSONP package design enables high thermal dissipation capability
- Enhanced avalanche ruggedness for robust operation in inductive loads
Applications
- Point-of-load DC-DC converters
- Synchronous rectification stages
- Industrial motor control systems
Procurement Notes
Verify the specific suffix 'BT' against the official Texas Instruments datasheet to confirm tape-and-reel packaging specifications. Ensure the ordered component matches the exact pinout and thermal pad configuration defined in the 8-VSONP drawing. Cross-reference the manufacturer part number directly with TI documentation to avoid substitution errors.
Selection Notes
Select this component for applications requiring high current handling in compact footprints. The low Rds(on) minimizes conduction losses in power conversion circuits. Evaluate the thermal resistance capabilities of the VSONP package against the system's heat dissipation requirements. Confirm that the gate charge parameters align with the driving circuit's switching frequency limits.
Part Context
This device belongs to the CSD1757x series of NexFET power MOSFETs from Texas Instruments. The series is designed for high-efficiency power management solutions. The Q5B designation indicates specific process and packaging variations within the broader product family. These components are engineered to replace older discrete solutions with integrated thermal advantages.
Replacement Considerations
Consult the Texas Instruments NexFET selection guide for verified cross-references. Potential substitutes may include other CSD1757x variants with compatible voltage and current ratings. Verify pin compatibility and thermal performance before implementing any alternative part numbers.
