CSD17575Q3

$1.04

Description：MOSFET N-CH 30V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:401d018c42b1 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4420 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 108W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON-CLIP (3.3x3.3)
Package / Case：8-PowerTDFN

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CSD17575Q3

Overview

The CSD17575Q3 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VDS rating of 30V and supports a continuous drain current of 182A. The device exhibits a maximum RDS(on) of 2.3 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 23nC, threshold voltage of 1.1V, and forward transconductance of 118S. Switching characteristics specify rise and fall times of 10ns and 3ns respectively. The component operates within a temperature range of -55°C to +150°C junction temperature with a power dissipation capacity of 108W.

Feature Summary

Utilizes NexFET technology for enhanced power efficiency
Features low on-resistance for reduced conduction losses
Includes built-in avalanche rating capability
Designed for high-speed switching applications

Applications

DC-DC converter circuits
Power management systems
Motor control drives

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct package variant and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component based on its 30V breakdown voltage and 182A current handling capabilities. Evaluate thermal performance requirements against the 108W power dissipation limit. Ensure gate drive voltages align with the specified 1.1V threshold and 2.3mOhm resistance characteristics for optimal switching efficiency in target designs.

Part Context

This device belongs to the CSD17575Q3 series of NexFET power MOSFETs from Texas Instruments. It is housed in a VSON-CLIP-8 surface-mount package designed for efficient heat dissipation. The product line focuses on delivering high-performance switching solutions for compact power electronics applications requiring robust current handling.