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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4430 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17576Q5B is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP (5x6) surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of up to 100 A at ambient temperature or 60 A under specific thermal conditions. Its maximum on-resistance is 2.4 mΩ at 10 V gate drive, with a typical gate charge of 53 nC. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance optimized for minimal conduction losses
- Enhancement mode operation with standard logic-level gate drive compatibility
Applications
- DC-DC converter circuits
- Power management modules
- Synchronous rectification stages
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration into final assemblies. Ensure component authenticity through authorized distribution channels.
Selection Notes
Select this component when a 30 V rating and low Rds(on) are required for compact power designs. Evaluate thermal performance based on the specified power dissipation limits in both ambient and case conditions. Consider the 8-VSONP footprint constraints during PCB layout planning.
Part Context
This part belongs to the CSD17576Q5 series within the NexFET family. It represents a discrete power transistor solution intended for general-purpose high-current switching tasks. The component is distinct from integrated gate drivers or controller ICs found in other product lines.
Replacement Considerations
Consult the official datasheet for electrically equivalent alternatives within the same voltage and current class. Verify pinout compatibility and thermal characteristics before substituting with parts from other manufacturers.
