CSD17576Q5BT

$1.75

Description：MOSFET N-CH 30V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5a4551c552f4 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4430 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (5x6)
Package / Case：8-PowerTDFN

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CSD17576Q5BT

Overview

The CSD17576Q5BT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a VDS rating of 30V and a continuous drain current (Id) of 100A at 25°C. The device offers a maximum RDS(on) of 2.4 mΩ at VGS = 10V. Key electrical parameters include a gate charge (Qg) of 68 nC, an input capacitance (Ciss) of 4430 pF, and a threshold voltage (VGS(th)) ranging from 1.1V to 1.8V. It operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSONP(5x6) package.

Feature Summary

NexFET technology providing low on-resistance for high efficiency
Enhancement mode N-channel configuration
Surface-mount design in a compact power package

Applications

DC-DC converter output stages
High-side and low-side switching applications
Power management circuits requiring low conduction loss

Procurement Notes

Verify the specific ordering suffix 'BT' corresponds to the required tape and reel packaging format with Texas Instruments. Confirm that the 8-VSONP(5x6) footprint matches your PCB layout constraints. Ensure thermal management strategies account for the specified power dissipation ratings under actual operating conditions.

Selection Notes

Select this component when a 30V N-channel MOSFET with high current capability is required. Compare the 2.4 mΩ RDS(on) against system efficiency targets. Evaluate the 68 nC gate charge against driver capabilities to ensure adequate switching speed without excessive losses.

Part Context

This part belongs to the CSD17576Q5B series of NexFET transistors. These devices are designed for synchronous rectification and general power switching applications. The series emphasizes low profile and high thermal performance suitable for dense power electronics designs.