CSD17577Q3A

$0.61

Description：MOSFET N-CH 30V 35A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2455ca3f9629 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 35A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2310 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 53W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (3x3.3)
Package / Case：8-PowerVDFN

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CSD17577Q3A

Overview

The CSD17577Q3A is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a VSONP-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 83 A. Its maximum on-resistance (Rds On) is 4.8 mΩ, with a gate threshold voltage (Vgs th) of 1.1 V and total gate charge (Qg) of 27 nC. The component operates within a temperature range of -55°C to +150°C, supporting a power dissipation of 53 W.

Feature Summary

NexFET technology provides enhanced switching performance through optimized gate charge characteristics.

Applications

Synchronous rectification in DC/DC converter circuits

Procurement Notes

Verify the specific suffix designation when ordering, as packaging variations such as reel or cut tape may exist for this part number. Confirm that the required operating temperature range aligns with the specified -55°C to +150°C limits. Ensure the PCB footprint matches the VSONP-8 package dimensions provided in the official datasheet before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current handling capability within a low-voltage 30 V system. The low on-resistance supports efficient power conversion, while the wide thermal operating range ensures reliability in demanding environments. Evaluate the thermal management requirements based on the 53 W power dissipation rating to maintain safe junction temperatures during operation.

Part Context

This component belongs to the NexFET family of power transistors from Texas Instruments. The series focuses on delivering high efficiency and fast switching speeds for modern power management designs. The VSONP-8 package offers a compact form factor suitable for space-constrained electronic assemblies requiring robust semiconductor switching capabilities.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Do not assume functional equivalence with other models without confirming matching electrical parameters and pin configurations.