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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2310 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 53W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17577Q5A is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP package for surface mount installation. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 83 A. Its on-resistance is specified at 4.2 mOhms, with a gate threshold voltage of 1.1 V and total gate charge of 27 nC. The component operates within a temperature range of -55°C to +150°C junction temperature, offering a power dissipation capacity of 53 W.
Feature Summary
- NexFET technology integration for optimized power performance
- Enhancement mode N-channel configuration
- Single channel design with built-in avalanche rating
Applications
- Synchronous rectification in DC-DC converters
- High-frequency power switching applications
- Low-voltage motor control circuits
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm RoHS compliance status and REACH SVHC declarations directly from the source documentation. Ensure the selected component matches the required thermal and electrical specifications for the intended application environment.
Selection Notes
Select this component based on its low on-resistance and high current handling capabilities suitable for efficient power conversion. Consider the thermal performance and package type for heat dissipation requirements. Evaluate the gate charge characteristics for switching speed optimization in high-frequency designs.
Part Context
This part belongs to the CSD17577 series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power management solutions requiring compact footprints and robust electrical performance. The series targets applications demanding reliable operation under varying thermal conditions.
Replacement Considerations
Consult the official TI substitution guide for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.
