CSD17578Q5A

$0.62

Description：MOSFET N-CH 30V 25A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ef03f6ac6cdf Category: Single FETs, MOSFETs Brand: Texas Instruments

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 25A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1510 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (5x6)
Package / Case：8-PowerTDFN

Download product information

CSD17578Q5A

Overview

The CSD17578Q5A is a 30V N-channel NexFET power MOSFET manufactured by Texas Instruments. It features an 8-pin VSONP surface-mount package with silicon technology. Key electrical parameters include a drain-source breakdown voltage of 30V, continuous drain current of 20A at 25°C, and on-resistance of 7.3mΩ at 10V gate drive. The device operates within a temperature range of -55°C to +150°C junction temperature, with maximum power dissipation rated at 3.2W at ambient temperature.

Feature Summary

NexFET technology for enhanced power efficiency
Single N-channel enhancement mode configuration
Built-in avalanche rating capability

Applications

DC-DC converter circuits
Power management modules
General-purpose switching applications

Procurement Notes

Verify the specific suffix (e.g., Q5A) against official Texas Instruments documentation to confirm exact electrical tolerances and packaging specifications. Ensure compatibility with required thermal management solutions given the 3.2W power dissipation rating. Confirm RoHS compliance status through the manufacturer's datasheet before integration into regulated designs.

Selection Notes

Select this component for low-voltage applications requiring high current handling in compact footprints. Evaluate thermal performance constraints carefully due to the specified power dissipation limits. Compare on-resistance values against system efficiency requirements to ensure optimal conduction losses are met within the designated operating temperature range.

Part Context

This part belongs to the NexFET family of power MOSFETs from Texas Instruments. These devices utilize advanced silicon processes to deliver improved figure-of-merit characteristics compared to standard MOSFETs. The series targets efficient power conversion in space-constrained electronic systems.