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Product Detailed Parameters
- Description：MOSFET N-CH 30V 25A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1510 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 42W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17578Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 30V drain-source breakdown voltage and a continuous drain current of 20A at 25°C. The device exhibits a maximum on-resistance of 9.4 milliohms. It operates within a temperature range from -40°C to +150°C junction temperature. The component utilizes a VSONP-8 surface-mount package for efficient thermal management and compact circuit board integration.
Feature Summary
- NexFET technology provides low gate charge and fast switching speeds
- Enhanced avalanche ruggedness supports robust operation in inductive loads
- Low on-resistance minimizes conduction losses in power paths
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific suffix Q5AT against official Texas Instruments documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure the ordering part number matches the exact voltage and current ratings required for the target application design.
Selection Notes
Select this component when a 30V rating with high current capacity is required in a small footprint. Compare the 9.4 milliohm resistance against alternative packages to balance conduction loss and thermal performance requirements for the specific PCB layout constraints.
Part Context
This device belongs to the CSD17578QxA series of NexFET power MOSFETs. The series focuses on optimizing efficiency for low-voltage, high-current applications. The Q5AT designation indicates the specific packaging and taping configuration used for automated assembly processes.
Replacement Considerations
Consult the TI CSD17578 datasheet for direct cross-reference recommendations. Verify that any substitute maintains identical pin configurations and electrical characteristics to ensure circuit compatibility.
