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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：998 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 29W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD17579Q3A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 30V and a continuous Id of 20A. The device has an Rds(on) of 11.8 mOhms at Vgs=10V. Gate threshold voltage (Vgs(th)) is 1.5V. Total gate charge (Qg) is 5.3 nC. Operating temperature range is -55°C to +150°C. Power dissipation is 29W. Package is VSONP-8.
Feature Summary
- NexFET technology for enhanced switching performance
- Single N-channel configuration with built-in diode
- Low on-resistance for efficient power handling
- Enhancement mode operation
Applications
- DC-DC converters
- Power management circuits
- Load switches
Procurement Notes
Verify the exact part number suffix against official Texas Instruments documentation to ensure correct package and tape/reel specifications. Confirm RoHS compliance status through current datasheets. Check for any recent product change notices that may affect pinout or electrical characteristics before finalizing procurement.
Selection Notes
Select this component for applications requiring low gate charge and fast switching speeds within a 30V system. The VSONP-8 package suits space-constrained designs. Ensure thermal management accounts for the 29W power dissipation rating under expected operating conditions.
Part Context
Part of the CSD17579Q3A series from Texas Instruments, designed for high-efficiency power conversion. Utilizes silicon-based NexFET technology to minimize conduction losses. Suitable for modern portable and industrial electronics requiring compact footprints.
Replacement Considerations
Consult official substitution guides for compatible NexFET devices with similar Rds(on) and Qg values. Verify pin compatibility and thermal performance before replacing.
