ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：998 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 29W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
Download product information
Overview
The CSD17579Q3AT is a NexFET power MOSFET manufactured by Texas Instruments. It features an N-channel enhancement mode configuration housed in an 8-pin VSONP surface-mount package. Key electrical parameters include a maximum drain-source voltage of 30 V and a continuous drain current of 11 A. The device exhibits a maximum on-resistance of 14.2 mΩ, with a typical gate charge of 5.3 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C and has a maximum power dissipation of 3.2 W.
Feature Summary
- NexFET technology for optimized switching performance
- Enhanced avalanche ruggedness
- Low thermal resistance design
Applications
- DC-DC converters
- Power management systems
- Motor control circuits
Procurement Notes
Verify the specific suffix 'Q3AT' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring a 30 V N-channel MOSFET with low on-resistance. Consider the 11 A current rating and 3.2 W power dissipation limits when designing thermal management solutions. The VSONP-8 package is suitable for space-constrained surface-mount designs requiring efficient heat dissipation.
Part Context
This part belongs to the Texas Instruments NexFET series, which focuses on high-efficiency power switching solutions. The CSD17579Q3AT is designed to replace older generation MOSFETs in various power conversion topologies, offering improved switching characteristics and reduced conduction losses compared to legacy devices.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same NexFET family. Verify that any substitute part matches the 30 V voltage rating, 8-pin VSONP package, and similar Rds(on) specifications to ensure circuit compatibility.
