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Product Detailed Parameters
- Description：MOSFET N-CH 30V 25A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1030 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17579Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current of 11 A at 25 °C. The device exhibits a maximum on-resistance of 14.2 mΩ at a gate-source voltage of 4.5 V. It utilizes an 8-pin VSCONP surface-mount package with dimensions of 3.5 mm in length and width, and 0.9 mm in height. The component operates within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- NexFET technology provides enhanced switching performance and low conduction losses.
- VSCONP package design facilitates efficient thermal dissipation for surface-mount applications.
- Enhanced mode operation ensures reliable switching characteristics.
Applications
- DC-DC converter circuits
- Power management modules
- Low-voltage load switching
Procurement Notes
Verify the specific suffix (e.g., AT) against the datasheet to confirm packaging type and reel specifications. Ensure the ordered part matches the required voltage and current ratings for the target application. Confirm RoHS compliance status through official manufacturer documentation before integration into production.
Selection Notes
Select this component for applications requiring a 30 V rating with moderate current handling capabilities. The 14.2 mΩ on-resistance offers a balance between conduction loss and cost. Consider the 8-pin VSCONP footprint for PCB layout constraints and thermal requirements relative to higher-current alternatives in the NexFET family.
Part Context
This device belongs to the Texas Instruments NexFET series, which focuses on high-efficiency power switching solutions. The CSD17579Q5A is designed for compact power designs where space efficiency and thermal performance are critical. It complements other low-voltage MOSFETs in the portfolio for various power conversion topologies.
Replacement Considerations
Check for direct pin-compatible substitutes within the same NexFET family that offer lower on-resistance or higher current ratings if system requirements change. Verify electrical parameters and package dimensions match before substitution.
