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Product Detailed Parameters
- Description：MOSFET N-CH 30V 60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3640 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (3x3.3)
- Package / Case：8-PowerVDFN
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Overview
The CSD17581Q3AT is a NexFET power MOSFET featuring an N-channel configuration with a 30V drain-source voltage rating. It supports a continuous drain current of 60A at case temperature and operates within a junction temperature range of -55°C to 150°C. The device exhibits a maximum gate-source threshold voltage of 1.7V at 250µA and a typical on-resistance of 3.8mΩ at 16A with 10V gate drive. Key electrical characteristics include a maximum gate charge of 54nC at 10V and a maximum input capacitance of 3640pF at 15V.
Feature Summary
- NexFET technology for optimized switching performance
- Built-in diode configuration for single FET applications
- Avalanche rated capability for robust operation
- Surface-mount 8-VSONP package design
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the complete part number including the 'T' suffix, which indicates tape-and-reel packaging, against specific manufacturing requirements. Confirm that the 8-VSONP package dimensions align with the intended PCB footprint. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions rather than idealized ratings.
Selection Notes
Select this component when a low-voltage, high-current solution is required in a compact form factor. The 30V rating suits 12V or 24V bus architectures. Evaluate the 3.8mΩ on-resistance against efficiency targets. Consider the 60A current capacity relative to thermal constraints and heatsinking capabilities in the final assembly design.
Part Context
This device belongs to Texas Instruments' NexFET family, designed for efficient power conversion. The Q3A/Q3AT suffix denotes specific packaging and reel configurations within the broader CSD17581 series. It serves as a discrete power switch alternative to integrated power stages in space-constrained designs.
Replacement Considerations
Direct substitutes require matching 30V/60A specifications and 8-VSONP packaging. Verify pinout compatibility and thermal resistance values before substitution.
