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Product Detailed Parameters
- Description：MOSFET N-CH 30V 24A/123A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3640 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17581Q5A is a 30-V N-channel NexFET power MOSFET in an 8-VSONP (5x6 mm) package. It features a typical drain-source on-resistance of 4.2 mΩ at 10 V gate drive, with a maximum rating of 3.4 mΩ. The device supports continuous drain currents of 24 A at ambient temperature and 123 A at case temperature. It operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for high efficiency
- Thermal pad design for enhanced heat dissipation
Applications
- DC-DC converter modules
- Power management integrated circuits
- Load switch applications
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets required automotive or industrial qualification standards if applicable to the target system environment.
Selection Notes
Select this component for applications requiring low conduction losses in compact surface-mount designs. Evaluate thermal resistance characteristics relative to the PCB copper area to ensure adequate heat dissipation under expected load conditions.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. These devices are engineered for high-density power conversion systems where small footprint and low RDS(on) are critical for maintaining efficiency and thermal performance.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins before replacing existing components in established designs.
