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Product Detailed Parameters
- Description：MOSFET N-CH 30V 24A/123A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3640 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17581Q5AT is a 30-V N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. It features an RDS(on) of 2.9 mΩ typical and 3.4 mΩ maximum at VGS = 10 V. The device supports continuous drain currents of 24 A at Ta = 25°C and 123 A at Tc = 25°C. It utilizes an 8-VSON package with dimensions of 5 mm x 6 mm, designed for surface mount applications in power management systems requiring low conduction losses.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance to minimize conduction losses
- Compact 5 mm x 6mm SON footprint
Applications
- DC-DC converters
- Power distribution networks
- Load switches
Procurement Notes
Verify the complete part number including the 'T' suffix for tape-and-reel packaging against the official Texas Instruments datasheet. Confirm that the specific lot code and manufacturing date align with project requirements. Ensure compatibility with the intended thermal management solution given the high current capabilities. Cross-reference the ordering information with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 30-V rating is sufficient and ultra-low RDS(on) is critical for efficiency. The 8-VSON package suits space-constrained designs. Evaluate thermal resistance parameters if operating near maximum current limits. Compare against other NexFET devices in the series for alternative pinouts or slightly different electrical characteristics if needed.
Part Context
This device belongs to the CSD175xxQ5A family of NexFET power MOSFETs. These components are engineered for high-efficiency power conversion. The Q5A designation indicates specific process technology optimizations. The family targets automotive and industrial applications requiring robust performance in compact form factors.
Replacement Considerations
Check for direct substitutes within the CSD175xxQ5A series with compatible pinouts and similar RDS(on). Verify that any replacement maintains the 30-V breakdown voltage and fits the 5x6 mm SON package. Ensure thermal characteristics match the original design constraints.
