CSD17585F5

$0.38

Description：MOSFET N-CH 30V 5.9A 3PICOSTAR
Series：FemtoFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4afcde1fd873 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.9A 3PICOSTAR
Series：FemtoFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id：1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：3-PICOSTAR
Package / Case：3-SMD, No Lead

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CSD17585F5

Overview

The CSD17585F5 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 5.9 A at 25°C, and a maximum on-resistance (Rds(on)) of 27 mΩ at Vgs = 10 V. The device features a gate charge (Qg) of 5.1 nC at 10 V, with threshold voltages ranging from 900 mV to 1.7 V. Operating temperatures span from -55°C to +150°C, with a power dissipation rating of 1.4 W.

Feature Summary

NexFET technology designed for high efficiency and low conduction losses
PICOSTAR-3 package optimized for thermal performance and compact footprint
Enhancement mode operation suitable for low-side switching applications

Applications

DC-DC converter modules
Power management circuits
Load switch implementations

Procurement Notes

Verify the specific ordering suffix when purchasing, as it determines the packaging format such as cut tape or reel. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the component matches the required PICOSTAR-3 package dimensions for PCB layout compatibility. Cross-reference the datasheet revision date to ensure all electrical characteristics align with current design specifications.

Selection Notes

Select this component for applications requiring a 30 V rating with moderate current handling capabilities up to 5.9 A. The low gate charge facilitates faster switching speeds, reducing dynamic losses in high-frequency converters. Evaluate the thermal resistance of the PICOSTAR-3 package against the expected power dissipation of 1.4 W to determine adequate heatsinking or PCB copper area requirements for reliable operation within the specified temperature range.

Part Context

This part belongs to the CSD17585 series of NexFET power MOSFETs from Texas Instruments. These devices are engineered to replace traditional discrete solutions in space-constrained designs. The FemtoFET family emphasizes reduced gate charge and on-resistance to improve overall system efficiency in portable and industrial power supplies.