SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CSD18501Q5A is an N-channel enhancement-mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 40 V and a continuous drain current of 155 A. The device utilizes an 8-pin SON surface-mount package with dimensions of 5.8 mm in length, 5 mm in width, and 1.1 mm in height. Key electrical parameters include a maximum on-resistance of 4.3 mΩ, a gate threshold voltage range of 1.4 V to 2.3 V, and a typical gate charge of 20 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific part number against official Texas Instruments documentation to confirm exact specifications. Ensure compatibility with required voltage and current ratings for the intended application. Check for RoHS compliance and other regulatory standards as needed. Confirm package type and pinout details before procurement.
Select this component based on its 40 V rating and 155 A current capability. Consider the 4.3 mΩ on-resistance for efficiency requirements. The 8-pin SON package suits space-constrained designs. Verify thermal management needs given the operating temperature range.
This component belongs to the NexFET family of power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power switching applications. The CSD18501Q5A specifically targets scenarios requiring robust current handling in a compact form factor.
No verified public substitute part numbers are available.