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Product Detailed Parameters
- Description：MOSFET N-CH 40V 19A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2640 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 120W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18503Q5A is a 40-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and operates in enhancement mode with a single channel configuration. The device supports surface mount installation in an 8-VSONP (5x6) package. Key electrical parameters include a drain-source voltage of 40 V, a continuous drain current of 17 A at ambient temperature and 100 A at case temperature, and a maximum on-resistance of 5.9 mOhms at 10 V gate drive. The gate threshold voltage is specified at 2.3 V, with a maximum gate charge of 36 nC. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- NexFET technology for optimized power performance
- Low on-resistance for efficient conduction
- Enhanced thermal management capabilities
Applications
- Power management systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific suffix Q5A against official Texas Instruments documentation to confirm the exact tape and reel packaging configuration. Ensure compatibility with standard surface mount assembly processes. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required for compact designs. The 8-VSONP package suits space-constrained PCB layouts. Evaluate thermal requirements based on the specified ambient and case temperature current ratings to ensure reliable operation within the stated junction temperature limits.
Part Context
This part belongs to the CSD18503 series of NexFET Power MOSFETs from Texas Instruments. The series focuses on low-voltage applications requiring high efficiency. The Q5A suffix denotes specific packaging and handling characteristics distinct from other variants in the same electrical family.
Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements may not match the specific thermal or switching characteristics of the NexFET platform.
