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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2640 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 120W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18503Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an enhancement mode channel configuration housed in a VSONP-8 surface-mount package. The device supports a drain-source voltage of 40V and delivers a continuous drain current of 75A at 25°C. Its on-resistance is specified at 6.6 milliohms, with a gate charge of 16 nanocoulombs. Operating temperatures range from -55°C to +150°C junction temperature, with a maximum power dissipation of 77W.
Feature Summary
- Single N-channel enhancement mode configuration for discrete switching applications
- NexFET technology platform utilizing silicon process for optimized performance
- Surface-mount VSONP-8 package design for compact board integration
Applications
- DC-DC converter circuits requiring low on-resistance
- Power management modules within electronic systems
- General-purpose switching applications compatible with the NexFET family
Procurement Notes
Verify the specific suffix 'AT' against official Texas Instruments documentation to confirm tape-and-reel packaging details. Ensure the component matches the VSONP-8 footprint requirements for your PCB layout. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component when a 40V rating and 75A continuous current capability are required in a small surface-mount form factor. Compare the 6.6 milliohm on-resistance against alternative packages like TO-220 or QFN if thermal constraints differ. Confirm that the 16 nanocoulomb gate charge aligns with your driver capabilities for efficient switching transitions.
Part Context
This part belongs to the CSD1850x series of NexFET power MOSFETs from Texas Instruments. The series offers various voltage and current ratings across different package types. The CSD18503 variant specifically targets applications needing moderate voltage blocking with high current handling in a compact SMD package.
Replacement Considerations
Consult official substitution guides for equivalent NexFET devices. Verify pinout compatibility and thermal characteristics when considering alternatives.
