ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 53A/100A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：53A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1800 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：115W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The CSD18504KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package. The device supports a drain-source voltage of 40 V and delivers a continuous drain current of 100 A. Its on-resistance is specified at 8 mOhms, with a gate charge of 19 nC. The component operates within a temperature range of -55°C to +150°C and handles up to 93 W of power dissipation.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- Through-hole mounting for robust mechanical stability
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply switching applications
Procurement Notes
Verify the specific suffix KCS to confirm the TO-220-3 through-hole package configuration. Ensure compatibility with thermal management requirements given the 93 W power dissipation rating. Confirm RoHS compliance status via official documentation before integration into regulated assemblies.
Selection Notes
Select this component when high current handling near 100 A is required in a through-hole format. The 40 V rating suits low-voltage DC bus applications. Compare gate charge specifications against driver capabilities to ensure efficient switching performance without excessive drive losses.
Part Context
This part belongs to the CSD18504 series of NexFET power MOSFETs. It shares core electrical characteristics with surface-mount variants like the CSD18504Q5A but differs in packaging and thermal interface design. The TO-220-3 form factor facilitates direct heatsinking for high-power density designs.
Replacement Considerations
Direct functional substitutes include other 40V N-channel MOSFETs with comparable Rds(on) and current ratings. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers or packages.
