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The CSD18504Q5A is a single N-channel NexFET Power MOSFET from Texas Instruments, designed for surface-mount applications. It features a maximum drain-source voltage of 40 V and a continuous drain current of 75 A at case temperature. The device utilizes an 8-pin SON package with dimensions of 5.8 mm length and 1.1 mm height. Key electrical parameters include a maximum on-resistance of 9.8 mΩ, a typical gate charge of 7.7 nC, and a forward voltage of 0.8 V. It operates within a temperature range of -55°C to 150°C with a power dissipation rating of 3.1 W.
Verify the specific suffix against official Texas Instruments documentation to confirm exact ordering and packaging variations. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when a low-voltage, high-current solution is required in a compact footprint. The 40 V rating suits low-side switching applications. Evaluate thermal management requirements given the 3.1 W dissipation limit in free air. Compare gate charge characteristics against driver capabilities to ensure adequate switching speed.
This part belongs to the CSD18504 series of NexFET Power MOSFETs. It shares the same voltage and current ratings as variants like CSD18504Q5AT but may differ in packaging or reel specifications. It complements other devices in the CSD16xxx and CSD185xx families offering similar silicon technologies.
Direct substitutes include CSD18504Q5AT. Verify pinout and thermal pad configurations match the existing design layout before substitution.