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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.2mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13900 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18509Q5B is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a VSON-CLIP-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 50 A, and a maximum on-resistance (Rds On) of 1.3 mOhms. The gate-source voltage range is -20 V to +20 V, with a threshold voltage (Vgs th) of 1.4 V and total gate charge (Qg) of 150 nC. Operating temperatures span from -55°C to +150°C, with a power dissipation rating of 195 W.
Feature Summary
- NexFET technology architecture designed for high-efficiency power switching applications
- Low on-resistance characteristic optimized for minimizing conduction losses
- Enhancement-mode operation suitable for direct logic-level or driver control
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Motor drive low-side switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the component meets RoHS and REACH regulatory requirements relevant to your target market. Cross-reference the package dimensions with your PCB footprint library to guarantee mechanical fit before finalizing procurement orders.
Selection Notes
Select this component when a 40V rating and low Rds On are required for high-current applications. Compare the 1.3 mOhm resistance against system loss budgets. Consider the VSON-CLIP-8 package for its thermal performance in space-constrained designs. Evaluate the 50 A current capability against peak load requirements to ensure adequate safety margins during transient conditions.
Part Context
This device belongs to the CSD18509 series within Texas Instruments' NexFET portfolio. It is part of a family of low-voltage power MOSFETs engineered for compact, high-density power conversion systems. The series emphasizes efficiency improvements through advanced silicon processing techniques.
Replacement Considerations
Consult the official datasheet for electrically equivalent alternatives within the same voltage and current class. Verify that any substitute maintains compatible gate charge and threshold voltage levels to ensure proper driver interface without modification.
