ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.2mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13900 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD18509Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an 8-pin VSON-CLIP package designed for surface mount applications. The device supports a drain-source voltage of 40V and delivers a continuous drain current of 100A. Key electrical parameters include a maximum on-resistance of 1.3 milliohms, a gate charge of 150nC, and a threshold voltage of 1.8V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 195W.
Feature Summary
- NexFET technology platform optimized for high-efficiency power switching
- VSON-CLIP package architecture providing enhanced thermal performance
- Low on-resistance characteristics for reduced conduction losses
Applications
- Point-of-load DC/DC converter stages
- High-current synchronous rectification circuits
- Power management modules requiring compact footprints
Procurement Notes
Verify the specific ordering suffix against official Texas Instruments documentation to confirm exact packaging configuration. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status via the manufacturer datasheet before integration into regulated assemblies.
Selection Notes
Select this component when a 40V rating and 100A current capacity are required in a small form factor. Evaluate the 1.3 milliohm on-resistance against system efficiency targets. Consider the 150nC gate charge for driver capability requirements and switching frequency limitations.
Part Context
This part belongs to the CSD18509Q5B series within the Texas Instruments NexFET portfolio. It represents a silicon-based enhancement mode transistor designed for modern power electronics. The VSON-CLIP package distinguishes it from traditional leaded or standard QFN alternatives.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinouts and thermal pad configurations carefully when considering alternative packages.
