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Product Detailed Parameters
- Description：MOSFET N-CH 40V 274A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：274A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：132 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：250W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18510KTTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 40 V, a continuous drain current of 200 A, and a maximum on-resistance of 2 mOhms. The device operates with a gate-source voltage range of -20 V to 20 V and has a threshold voltage of 1.4 V. It exhibits a total gate charge of 153 nC, with rise and fall times of 8 ns each. The component supports a power dissipation of 250 W and functions within an ambient temperature range of -55°C to +175°C.
Feature Summary
- NexFET technology for enhanced power efficiency
- Low on-resistance for reduced conduction losses
- High current handling capability
- Avalanche rated for robust operation
Applications
- DC-DC converters
- Power switching applications
- Motor control circuits
Procurement Notes
Verify the exact part number suffix against official Texas Instruments documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the ordering code matches the required D2PAK-3 variant and thermal characteristics specified in the manufacturer's datasheet.
Selection Notes
Select this component for high-current applications requiring low on-resistance and fast switching speeds. The 40V rating suits low-voltage DC systems. Consider the TO-263-3 package for adequate thermal management and PCB space constraints. Verify that the gate drive requirements align with the 1.4V threshold and 153nC gate charge specifications.
Part Context
This part belongs to the CSD18510 series of NexFET power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion and switching applications. The series leverages advanced silicon technology to achieve low Rds(on) and high current density in compact surface-mount packages.
Replacement Considerations
Consult official Texas Instruments substitution guides for verified equivalents. Cross-reference parameters such as Rds(on), Id, Vds, and package type when evaluating alternative components.
