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Product Detailed Parameters
- Description：MOSFET N-CH 40V 300A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.96mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：153 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11400 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18510Q5B is a silicon N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 40V drain-source voltage rating and supports a continuous drain current of 300A at case temperature. The device exhibits a maximum on-resistance of 0.96 milliohms at 10V gate drive. Key electrical characteristics include a maximum gate charge of 153nC and an input capacitance of 11400pF. It operates within a junction temperature range of -55°C to 150°C with a maximum power dissipation of 156W. The component utilizes an 8-VSON-CLIP surface-mount package.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for high efficiency conduction
- Robust thermal management via Clip package design
Applications
- Point-of-load DC/DC converters
- High-current synchronous rectification stages
- Power distribution modules
Procurement Notes
Verify the specific ordering suffix Q5B against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging configuration. Ensure that the requested quantity aligns with standard reel sizes defined in the product documentation. Cross-reference the DigiKey part number 296-48514-2-ND or equivalent distributor codes to validate availability status and lead times prior to finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring low Rds(on) within a 40V voltage class. The 8-VSON-CLIP package is suitable for applications demanding high current density in compact footprints. Evaluate thermal resistance requirements carefully, as the 156W power dissipation rating assumes optimal case cooling conditions. Compare gate charge specifications against driver capabilities to ensure efficient switching transitions.
Part Context
This device belongs to the CSD18510 series from Texas Instruments, representing their NexFET family of power MOSFETs. The series focuses on minimizing conduction losses while maintaining fast switching speeds. The Q5B designation specifically identifies the surface-mount variant packaged in the 8-VSON-CLIP format, distinguishing it from through-hole alternatives like the KCS package.
Replacement Considerations
Consult the official datasheet for direct pin-compatible substitutes within the same NexFET family. Verify that any alternative component matches the 40V Vdss rating and comparable Rds(on) values to maintain circuit performance integrity.
