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Product Detailed Parameters
- Description：MOSFET N-CH 40V 110A/194A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：110A (Ta), 194A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：188W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The CSD18511KTTT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 40V drain-source voltage rating and operates in enhancement mode. The device supports a continuous drain current of 194A at case temperature and 110A at ambient temperature, with a maximum power dissipation of 188W. It utilizes a surface-mount TO-263 (DDPAK-3) package. Key electrical characteristics include a gate-source voltage range of ±20V, a threshold voltage of 1.5V, and a gate charge of 64nC. The component operates within a temperature range of -55°C to +175°C.
Feature Summary
- Utilizes NexFET technology for high-power switching applications
- Designed for demanding environments with robust thermal performance
- Single channel configuration for simplified circuit integration
Applications
- Embedded systems requiring reliable power management
- Industrial automation control circuits
- High-current DC-DC converter stages
Procurement Notes
Verify the specific suffix KTTT to confirm the TO-263 surface-mount package variant. Ensure compatibility with standard DDPAK-3 footprints during PCB layout. Confirm that the selected supplier provides original manufacturer documentation to validate authenticity and technical specifications against the official Texas Instruments datasheet.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required in a surface-mount format. The TO-263 package offers superior thermal handling compared to smaller SMD packages. Consider the 40V rating and 194A current capability for applications exceeding standard logic-level switch requirements while maintaining compact board space.
Part Context
This part belongs to the CSD18511 series of NexFET power MOSFETs from Texas Instruments. The series includes various package options such as TO-220 through-hole and VSON surface-mount variants. The KTTT designation specifically identifies the TO-263 (DDPAK-3) surface-mount version, distinguishing it from other physical form factors within the same electrical family.
Replacement Considerations
Direct substitutes include other CSD18511 series parts with different packages, such as CSD18511KCS (TO-220) or CSD18511Q5A (VSONP-8), provided the mechanical footprint allows for adaptation. Verify that alternative components meet the same 40V, 194A, and thermal dissipation requirements.
