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Product Detailed Parameters
- Description：MOSFET N-CH 40V 211A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：211A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7120 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18512Q5B is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an 8-VSON-CLIP (5x6) surface-mount package. The device supports a drain-source voltage of 40 V and delivers a continuous drain current of 211 A at case temperature. Its maximum on-resistance is 1.6 mΩ at 30 A and 10 V gate-source voltage. The component operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 139 W at the case.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Integrated thermal clip structure in the 8-VSON-CLIP package for enhanced heat dissipation
- Low on-resistance optimized for minimal conduction losses in high-current circuits
Applications
- Point-of-load DC/DC converters
- High-current synchronous rectification stages
- Industrial motor control systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required tape-and-reel or cut-tape specifications. Cross-reference the full part number with the latest datasheet revision to validate electrical parameters and compliance status before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring low on-resistance and high current handling capabilities within a compact footprint. Ensure the thermal management strategy accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the threshold requirements for optimal performance and switching efficiency.
Part Context
This component belongs to the CSD185xx series of NexFET power MOSFETs from Texas Instruments. The series focuses on delivering high performance in small packages for modern power management solutions. The Q5B designation indicates specific packaging and reliability characteristics consistent with the manufacturer's industrial-grade offerings.
Replacement Considerations
Consult the official Texas Instruments substitution guide for verified alternatives. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal performance characteristics.
