ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 124A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4280 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD18513Q5A is a 40-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features an enhancement mode single-channel configuration housed in an 8-VSONP package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 17 A at case temperature and 100 A at ambient conditions, and a maximum on-resistance (Rds On) of 2.7 mΩ. The device supports a gate-source voltage range of ±20 V with a threshold voltage of 1.5 V. It exhibits a gate charge of 82 nC, input capacitance of 2750 pF, and power dissipation capabilities up to 116 W at case temperature. Operating temperatures range from -55°C to +150°C junction.
Feature Summary
- NexFET technology for optimized power efficiency
- Low on-resistance for reduced conduction losses
- Enhanced thermal performance via VSONP packaging
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging variations. Ensure compatibility with RoHS and REACH regulatory standards required for your region. Cross-reference the ordering part number with the latest Texas Instruments documentation to avoid discrepancies between different manufacturing revisions or package types.
Selection Notes
Select this component when a 40-V rating is sufficient for the application, offering lower cost compared to higher voltage variants. Consider the 8-VSONP package size for space-constrained designs requiring surface mount assembly. Evaluate the thermal resistance characteristics against the expected heat dissipation requirements in the target circuit environment.
Part Context
This part belongs to the CSD185xx series of NexFET Power MOSFETs from Texas Instruments. These devices are designed for high-efficiency switching applications. The Q5A suffix typically denotes specific packaging and tape/reel configurations within the product line. Related parts in the family include CSD18511Q5A and CSD18514Q5A, which share similar voltage ratings but may differ in current handling or resistance specifications.
Replacement Considerations
Direct substitutes include CSD18511Q5A and CSD18514Q5A. Verify pinout compatibility and ensure that the alternative part meets or exceeds the original 40-V breakdown voltage and current carrying capacity requirements before implementation.
