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Product Detailed Parameters
- Description：MOSFET N-CH 40V 124A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4280 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18513Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 40V drain-source voltage rating and operates with a gate-source voltage range of -20V to +20V. The device utilizes a VSONP-8 surface-mount package. Key electrical parameters include a maximum continuous drain current of 75A, a typical on-resistance of 6.6mΩ, and a gate charge of 16nC. It supports an operating temperature range from -55°C to +150°C.
Feature Summary
- NexFET technology for optimized switching performance
- Enhancement-mode N-channel configuration
- Low thermal resistance design for efficient heat dissipation
Applications
- DC-DC converter circuits
- Power management modules
- Synchronous rectification applications
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure ESD handling protocols are followed during assembly due to the sensitive gate structure inherent to MOSFET devices.
Selection Notes
Select this component for low-voltage, high-current applications requiring fast switching speeds. Compare Rds(on) and Qg values against alternative NexFET series members to balance conduction losses and switching efficiency. Validate thermal performance under actual load conditions using the specified junction-to-ambient characteristics.
Part Context
This part belongs to the CSD185xxQ5A family of NexFET power MOSFETs. These components are designed for high-efficiency power conversion systems. The VSONP-8 package provides a compact footprint suitable for space-constrained PCB layouts while maintaining robust electrical performance standards.
Replacement Considerations
Direct substitutes within the same family include CSD18511Q5AT and CSD18504Q5AT. Verify pinout compatibility and ensure that the alternative part's voltage and current ratings meet or exceed the original design requirements before substitution.
