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The CSD18514Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-VSONP surface-mount package. The device features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 75 A. Its on-resistance is specified at 6.6 milliohms, with a gate threshold voltage of 1.5 V and total gate charge of 16 nC. The component supports a maximum junction temperature of 150 °C and operates within a range from -55 °C to +150 °C.
Verify the specific suffix against official documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement plans.
Select this component for designs requiring a 40 V rating with high current handling capabilities. The low on-resistance minimizes conduction losses in power paths. Evaluate thermal requirements carefully given the 75 A rating and ensure adequate PCB copper area for heat spreading.
This part belongs to the CSD185xx series of NexFET power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion applications. The series offers various current ratings within the same package footprint to simplify supply chain management.
Cross-reference with CSD18504Q5AT for similar electrical characteristics. Verify pinout compatibility and thermal performance metrics before substitution.