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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18532Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds of 60V and an Rds(on) of 2.5 mΩ at Vgs=10V. The device supports a continuous drain current (Id) of 100A at Ta=25°C and handles up to 156W power dissipation at TC=25°C. Key electrical parameters include a gate charge (Qg) of 41 nC, threshold voltage (Vgs(th)) of 1.5V, and switching times of 3 ns (fall) and 9 ns (rise). It operates within a junction temperature range of -55°C to +150°C and is housed in a VSON-CLIP-8 package.
Feature Summary
- NexFET technology designed to minimize conduction and switching losses in power conversion applications.
- Low on-resistance (Rds(on)) of 2.5 mΩ for high efficiency.
- High thermal performance with 156W power dissipation capability at case temperature.
- Fast switching characteristics with low gate charge.
Applications
- Power conversion circuits requiring low loss.
- DC-DC converters.
- Motor control applications.
Procurement Notes
Verify the specific suffix 'Q5BT' against the manufacturer's datasheet to confirm package type (VSON-CLIP-8) and tape/reel specifications. Ensure compatibility with your PCB footprint and reflow profile requirements. Cross-reference the part number with official Texas Instruments documentation to avoid counterfeit components and confirm RoHS/REACH compliance status prior to ordering.
Selection Notes
Select this component when a 60V N-channel MOSFET with very low Rds(on) is required for high-current applications. The 100A continuous current rating and 156W thermal dissipation make it suitable for dense power designs. Consider the VSON-CLIP-8 package for its thermal advantages over standard SOIC or DPAK packages in space-constrained layouts.
Part Context
This part belongs to the CSD18532Q5B series of NexFET power MOSFETs from Texas Instruments. These devices are engineered for high-efficiency power management solutions. The series utilizes silicon technology and is marketed under the NexFET brand, emphasizing optimized performance metrics for modern power electronics.
Replacement Considerations
Direct substitutes may include other 60V N-channel MOSFETs with similar Rds(on) and current ratings, such as the CSD18540Q5BT (60V, 2.2mΩ) or CSD18509Q5BT (40V, 1.3mΩ), provided voltage and thermal constraints allow. Verify pinout and package dimensions before substitution.
