CSD18533KCS

$1.95

Description：MOSFET N-CH 60V 72A/100A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube

SKU:177bb337a419 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 72A/100A TO220-3
Series：NexFET™
Mfr：Texas Instruments
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：72A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3025 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：192W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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CSD18533KCS

Overview

The CSD18533KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package. Key electrical parameters include a drain-source voltage (Vds) of 60 V, a continuous drain current (Id) of 100 A, and a maximum on-resistance (Rds On) of 6.9 mOhms. The device operates with a gate-source voltage range of -20 V to 20 V and has a threshold voltage (Vgs th) of 1.9 V. Additional specifications include a gate charge (Qg) of 28 nC, power dissipation (Pd) of 160 W, and an operating temperature range from -55°C to +150°C.

Feature Summary

NexFET technology designed for low conduction losses
Enhancement mode N-channel configuration
Through-hole mounting for robust mechanical connection

Applications

Power conversion circuits
Load management systems
DC-DC converters

Procurement Notes

Verify the specific part number against official Texas Instruments documentation to ensure accuracy. Confirm that the TO-220-3 package and 60V rating match your design requirements. Check for RoHS compliance status in the latest datasheet. Ensure thermal management solutions are adequate for the specified power dissipation limits during operation.

Selection Notes

Select this component when a through-hole N-channel MOSFET with 60V capability is required. The 6.9 mOhm on-resistance offers a balance between conduction loss and switching performance. Consider the 100 A current rating for high-power applications. Verify that the gate drive voltage aligns with the 1.9 V threshold specification for reliable switching.

Part Context

This component belongs to the CSD18533 series of NexFET power MOSFETs. It is part of Texas Instruments' portfolio of silicon-based discrete semiconductors. The series includes variants with different packaging options, such as surface-mount versions like the CSD18533Q5A. The KCS suffix indicates the specific through-hole TO-220-3 package configuration.