CSD18533Q5A

$1.29

Description：MOSFET N-CH 60V 17A/100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d36e2af1c5a6 Category: Single FETs, MOSFETs Brand: Texas Instruments

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 17A/100A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2750 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 116W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (5x6)
Package / Case：8-PowerTDFN

Download product information

CSD18533Q5A

Overview

The CSD18533Q5A is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a Vds rating of 60 V and a continuous drain current (Id) of 17 A at ambient temperature, scaling to 100 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 5.9 mOhms at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 36 nC, a threshold voltage (Vgs th) of 2.3 V, and an input capacitance (Ciss) of 2750 pF. Power dissipation is rated at 3.2 W at ambient and 116 W at case temperatures. The component operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSONP package.

Feature Summary

NexFET technology enables low on-resistance for efficient power switching
Enhancement mode N-channel configuration for standard logic control
Robust thermal performance supporting high case temperature operation

Applications

DC-DC converter circuits
Power management modules
Motor control systems

Procurement Notes

Verify the specific suffix 'Q5A' against official Texas Instruments documentation to confirm the exact package variant and tape-and-reel specifications. Ensure that the ordering part number matches the required moisture sensitivity level and shipping format. Cross-reference the manufacturer's datasheet for any recent updates regarding RoHS compliance or REACH status before finalizing procurement orders.

Selection Notes

Select this component when a 60 V N-channel MOSFET with low Rds On is required in a compact surface-mount footprint. The 8-VSONP package suits applications with strict space constraints. Evaluate the thermal requirements carefully, as the current rating varies significantly between ambient and case conditions. Confirm that the gate drive voltage aligns with the specified 4.5 V or 10 V thresholds for optimal performance.

Part Context

This device belongs to the CSD18533 series of NexFET power MOSFETs from Texas Instruments. The series focuses on high-efficiency switching solutions using silicon technology. The Q5A designation typically indicates a specific packaging and taping configuration suitable for automated surface-mount assembly processes, distinguishing it from through-hole or tube-packaged variants.