CSD18534Q5A

$1.17

Description：MOSFET N-CH 60V 13A/50A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:21fbca78500f Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A/50A 8VSON
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1770 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 77W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSONP (5x6)
Package / Case：8-PowerTDFN

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CSD18534Q5A

Overview

The CSD18534Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a VSONP-8 surface-mount package with a drain-source voltage rating of 60V and a continuous drain current of 50A. The device exhibits a maximum on-resistance of 9.8 mOhms at 10V gate drive. Key electrical parameters include a gate charge of 22 nC, a threshold voltage of 1.5V, and a power dissipation capacity of 77W. Operating temperatures range from -55°C to +150°C junction temperature.

Feature Summary

NexFET technology designed for low conduction losses
Enhancement mode N-channel configuration
Surface-mount VSONP-8 packaging

Applications

Power conversion load management
DC-DC converter circuits
Synchronous rectification applications

Procurement Notes

Verify the specific suffix 'T' in the ordering part number CSD18534Q5AT against the official datasheet to confirm reel packaging requirements. Ensure the component matches the exact VSONP-8 footprint dimensions specified in the mechanical drawings before finalizing procurement orders.

Selection Notes

Select this component when a 60V rated N-channel MOSFET with high current handling capability is required in a compact surface-mount form factor. The low on-resistance supports efficient power delivery in space-constrained designs requiring robust thermal performance within standard operating temperature ranges.

Part Context

This component belongs to the CSD18534Q5A series of NexFET power MOSFETs. It represents a silicon-based enhancement mode device optimized for general-purpose power switching applications. The series provides standardized electrical characteristics for integration into modern power supply architectures.