CSD18534Q5AT

Overview

The CSD18534Q5AT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in an 8-pin VSONP package designed for surface mount applications. The device features a drain-source breakdown voltage of 60V and supports a continuous drain current of 50A. Its maximum on-resistance is specified at 9.8 milliohms, with a gate charge of 22 nanocoulombs. The component operates within a temperature range of -55°C to +150°C junction temperature and offers a power dissipation capacity of 77 watts.

Feature Summary

• NexFET technology optimized for low conduction losses
• Enhancement mode N-channel configuration
• Thermal pad design for efficient heat dissipation

Applications

• DC-DC converter circuits
• Power management systems
• Load switching applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a 60V rating and low on-resistance are required for high-efficiency power conversion. The VSONP package suits space-constrained designs needing robust thermal performance. Ensure gate drive voltages align with the specified threshold and maximum ratings for optimal switching characteristics.

Part Context

This part belongs to the CSD18534Q5A series of NexFET power MOSFETs from Texas Instruments. These devices are engineered to minimize power loss in various power supply architectures. The series provides a balance of electrical performance and thermal reliability for modern electronic equipment.

Replacement Considerations

Consult official substitution guides for equivalent parts with matching voltage, current, and package specifications.