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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6620 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18535KTT is a 60-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a maximum drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 279 A at case temperature. The device exhibits a low on-resistance (Rds(on)) of 2 mΩ at Vgs = 10 V, with a gate charge (Qg) of 63 nC. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220-3 package.
Feature Summary
- NexFET technology for optimized power performance
- Low on-resistance for reduced conduction losses
- High current handling capability
- Enhanced thermal stability
Applications
- Synchronous rectification in DC-DC converters
- Power switching applications
- Motor control circuits
Procurement Notes
Verify the specific suffix 'TT' against the manufacturer's official datasheet to confirm packaging details and availability status. Ensure compatibility with existing thermal management designs given the high current rating. Cross-reference ordering information directly with Texas Instruments or authorized distributors to avoid counterfeit components.
Selection Notes
Select this component for applications requiring high efficiency and robust current handling in a through-hole package. Compare Rds(on) and Qg values against alternative packages like KCS or Q5A variants to determine the optimal balance between thermal performance and board space constraints for the specific design requirements.
Part Context
This part belongs to the CSD18535 series of NexFET Power MOSFETs from Texas Instruments. The series includes various package options such as TO-220-3 (KCS/KTT) and VSONP-8 (Q5A). These devices are designed for high-efficiency power conversion systems, offering improved switching characteristics compared to standard silicon MOSFETs.
Replacement Considerations
Check for direct pin-compatible alternatives within the same NexFET family, such as CSD18535KCS, which shares similar electrical characteristics but differs in packaging. Verify that any substitute maintains the required 60-V rating and 2-mΩ on-resistance specifications.
