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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A TO220-3
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11430 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The CSD18536KCS is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a TO-220-3 through-hole package. The device supports a drain-source voltage of 60 V and delivers a continuous drain current of 349 A. Its on-resistance is specified at 1.6 mOhms, with a gate charge of 108 nC. The component operates within a temperature range of -55°C to +175°C and handles a power dissipation of 375 W.
Feature Summary
- NexFET technology for enhanced power efficiency
- High current handling capability in a through-hole package
- Low on-resistance for reduced conduction losses
Applications
- Synchronous rectification in power supplies
- DC-DC converter circuits
- Power management systems
Procurement Notes
Verify the specific datasheet version and RoHS compliance status directly with Texas Instruments or authorized distributors before procurement. Confirm that the TO-220-3 package dimensions match your PCB layout requirements. Ensure thermal management solutions are adequate for the 375 W power dissipation rating under your specific operating conditions.
Selection Notes
Select this component when high current capacity and low on-resistance are required in a through-hole configuration. The 60 V rating suits applications with moderate voltage levels. Consider the 108 nC gate charge for switching speed requirements. Compare against lower current variants if space or cost constraints exist.
Part Context
This part belongs to the CSD1853x series of NexFET power MOSFETs from Texas Instruments. These devices are designed for high-efficiency power conversion applications. The KCS suffix indicates the specific TO-220-3 through-hole packaging variant within the broader product family.
Replacement Considerations
Check for direct pin-compatible substitutes within the same NexFET series. Verify that any replacement maintains the 60 V rating and comparable on-resistance values.
