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Product Detailed Parameters
- Description：MOSFET N-CH 60V 200A/349A DDPAK
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：200A (Ta), 349A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11430 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：375W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (DDPAK-3)
- Package / Case：TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
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Overview
The CSD18536KTTT is a 60-V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It features a D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a maximum continuous drain current of 279 A, a maximum drain-source voltage of 60 V, and a typical on-resistance of 2.9 mΩ. The device supports a gate-source voltage range of -20 V to +20 V and operates within a temperature range of -55 °C to +175 °C. Typical gate charge is 140 nC at 10 V, with a maximum power dissipation of 300 W.
Feature Summary
- NexFET technology designed for low conduction losses
- Enhanced mode N-channel configuration
- High thermal stability up to 175°C junction temperature
Applications
- Power conversion load management
- Synchronous buck applications
- General purpose power switching
Procurement Notes
Verify the specific suffix KTTT against the manufacturer datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB layout. Cross-reference the revision level in the official documentation to avoid discrepancies in electrical parameters or marking codes during production integration.
Selection Notes
Select this component for high-current applications requiring low on-resistance at 60V ratings. The D2PAK package provides robust thermal performance for power densities up to 300W. Compare gate charge requirements against driver capabilities to ensure optimal switching speeds. Verify that the 279A current rating aligns with the system's peak load demands and thermal management constraints.
Part Context
This part belongs to the NexFET family from Texas Instruments, which focuses on silicon-based power MOSFETs optimized for efficiency. The CSD18536 series shares similar voltage and package characteristics with parts like CSD18535KTTT and CSD18536KCS, differing primarily in specific resistance values and packaging formats such as SON or D2PAK.
Replacement Considerations
Compatible substitutes include CSD18535KTTT and CSD18536KCS. Verify pin compatibility and thermal resistance differences when substituting between D2PAK and smaller SON packages. Ensure the alternative part meets the same 60V and 279A specifications.
