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Product Detailed Parameters
- Description：MOSFET N-CH 60V 50A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD18537NQ5A is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 60 V drain-source voltage rating and a continuous drain current of 50 A. The device exhibits a maximum on-resistance of 13 mΩ at 10 V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation capacity of 75 W. Key switching parameters include a gate charge of 14 nC, an input capacitance of 1290 pF, and rise/fall times of 4 ns and 3.2 ns respectively.
Feature Summary
- Utilizes NexFET technology for enhanced efficiency in power conversion applications.
- Provides low conduction losses through minimized on-resistance characteristics.
- Features fast switching speeds suitable for high-frequency operation.
Applications
- DC-DC converter circuits
- Power management modules
- Synchronous rectification stages
Procurement Notes
Verify the specific suffix 'NQ5A' against official Texas Instruments documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS and REACH regulatory requirements as defined in the latest datasheet revision. Cross-reference ordering part numbers with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 60 V N-channel MOSFET with 50 A current capability is required in a compact VSONP-8 package. Consider the 13 mΩ on-resistance for thermal management in space-constrained designs. Evaluate gate charge and capacitance values against driver capabilities to optimize switching performance and minimize losses.
Part Context
This device belongs to the CSD18537 series of NexFET Power MOSFETs from Texas Instruments. The series offers various package options including surface mount and through-hole configurations. The CSD18537NQ5A specifically denotes the VSONP-8 surface-mount variant designed for high-density PCB layouts.
Replacement Considerations
Consult official substitution guides for equivalent parts such as CSD18537NKCS or other NexFET devices with matching voltage and current ratings. Verify pinout compatibility and thermal performance before replacing.
