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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2.2A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：777 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-SMD, No Lead
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Overview
The CSD18541F5T is a 60V N-Channel FemtoFET MOSFET manufactured by Texas Instruments. It utilizes advanced silicon technology to deliver high performance in low-voltage synchronous buck applications. The device features an enhanced surface-mount package designed for thermal efficiency and reliability. Key electrical characteristics include a drain-source breakdown voltage of 60V, optimized gate charge for fast switching, and low on-resistance to minimize conduction losses. It supports continuous current handling suitable for power conversion stages.
Feature Summary
- NexFET™ technology for high efficiency
- Enhanced thermal performance packaging
- Optimized for synchronous buck converters
Applications
- Low voltage synchronous buck half bridge applications
- Point-of-load (POL) power supplies
- High frequency DC/DC conversion circuits
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging configuration as per official datasheets. Confirm RoHS compliance status through the manufacturer's documentation. Ensure the component matches the exact part number CSD18541F5T to avoid pinout or electrical specification mismatches with similar NexFET devices.
Selection Notes
Select this component for designs requiring compact form factors and high switching frequencies. Evaluate thermal management requirements based on the specific package type. Compare gate charge and on-resistance values against system efficiency targets. Ensure input voltage levels remain within the 60V rating for reliable operation.
Part Context
This part belongs to the Texas Instruments NexFET™ family of power MOSFETs. These components are engineered to replace discrete solutions in power blocks, offering reduced footprint and improved performance. The FemtoFET series focuses on minimizing parasitic effects for high-speed switching applications.
Replacement Considerations
Consult official substitution guides for equivalent NexFET devices. Verify pin compatibility and thermal characteristics before replacing with alternative part numbers.
